Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers-Reference-Cited by-同舟云学术

Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

Published:2019-06 Issue:6 Volume:7 Page:061107
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Onaya Takashi¹²³^ORCID,Nabatame Toshihide²,Sawamoto Naomi¹,Ohi Akihiko²,Ikeda Naoki²,Nagata Takahiro²^ORCID,Ogura Atsushi¹

Affiliation:

1. Department of Electrical Engineering, Graduate School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan

2. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Research Fellow of Japan Society for the Promotion of Science (JSPS), 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan

Funder

Japan Society for the Promotion of Science

Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5096626

Reference52 articles.

1. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films

4. Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

5. Pyroelectric response in crystalline hafnium zirconium oxide (Hf1-xZrxO2) thin films

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