Stable Subloop Behavior in Ferroelectric Si-Doped HfO2-Reference-Cited by-同舟云学术

Stable Subloop Behavior in Ferroelectric Si-Doped HfO2

Published:2019-10-02 Issue:42 Volume:11 Page:38929-38936
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Kyoungjun^ORCID,Lee Hyun-Jae¹,Lee Tae Yoon^ORCID,Lim Hong Heon,Song Myeong Seop,Yoo Hyang Keun²,Suh Dong Ik²,Lee Jae Gil²,Zhu Zhongwei³,Yoon Alexander³,MacDonald Matthew R.⁴,Lei Xinjian⁴,Park Kunwoo⁵,Park Jungwon⁵^ORCID,Lee Jun Hee¹,Chae Seung Chul

Affiliation:

1. School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea

2. SK Hynix Incorporation, Icheon-si, Gyeonggi-do 17336, Korea

3. Lam Research Corporation, Fremont, California 94538, United States

4. Versum Materials Incorporation, Carlsbad, California 92011, United States

5. Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea

Funder

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject