TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect-Reference-Cited by-同舟云学术

TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect

Published:2019-02-04 Issue:5 Volume:114 Page:052902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Yuxing¹²,Liang Renrong¹²,Xiong Benkuan²³,Liu Houfang¹²,Zhao Ruiting¹²,Li Jingzhou²³,Liu Ting¹²,Pang Yu¹²,Tian He¹²,Yang Yi¹²,Ren Tian-Ling¹²

Affiliation:

1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China

2. Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

3. Department of Physics, Tsinghua University, Beijing 100084, China

Funder

Beijing Natual Science Foundation of China and Research Fund from Beijing Innovation Center for Future Chip

Independent Research Program of Tsinghua University

National Basic Research in the Public Interest of China

National Key R&D Program

National Natural Science Foundation of China

Shenzhen Science and Technology Program

Special Fond for Agroscientific Research in the Public Interest of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5083231

Reference19 articles.

1. Ultrafast polarization switching in thin-film ferroelectrics

2. Ferroelectric Memories

3. B. A. Dahl , J. Cruz-Colon , R. C. Baumann , J. A. Rodriguez , C. Zhou , J. Rodriguez-Latorre , S. Khan , T. San , and T. Trinh , in 2015 IEEE Radiation Effects Data Workshop (IEEE, 2015), pp. 1–6.

4. Ferroelectricity in hafnium oxide thin films

5. Ferroelectricity in Simple Binary ZrO2 and HfO2

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