High Performance Schottky Barrier TFTs With Indium–Gallium–Zinc-Oxide/Mo Schottky Junction
Author:
Affiliation:
1. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Shaanxi Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10081123/10043705.pdf?arnumber=10043705
Reference22 articles.
1. Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
2. Electric field modulation of Schottky barrier height in graphene/MoSe2van der Waals heterointerface
3. Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy
4. Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes
5. Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide
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