Electric field modulation of Schottky barrier height in graphene/MoSe2van der Waals heterointerface
Author:
Affiliation:
1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
2. Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
Funder
Japan Society for the Promotion of Science (JSPS)
Ministry of Education, Culture, Sports, Science, and Technology (MEXT)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4926973
Reference23 articles.
1. Van der Waals heterostructures
2. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics
3. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
4. Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
5. Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
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