Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Author:

Yan Anzhi1ORCID,Wang Chunlin1,Yan Jianlan1,Wang Zhenze1,Zhang Enyi1,Dong Yu1,Yan Zhao‐Yi1ORCID,Lu Tian1,Cui Tianrui1ORCID,Li Ding1ORCID,Shen Penghui1,Jin Yuxin1,Liu Houfang1ORCID,Yang Yi1,Ren Tian‐Ling1ORCID

Affiliation:

1. School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Beijing 100084 China

Abstract

AbstractHigh‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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