7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate-Reference-Cited by-同舟云学术

7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate

Published:2014-02 Issue: Volume: Page:
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Container-title:2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)
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Author:

Ahn JungChak,Lee Kyungho,Kim Yitae,Jeong Heegeun,Kim Bumsuk,Kim Hongki,Park Jongeun,Jung Taesub,Park Wonje,Lee Taeheon,Park Eunkyung,Choi Sangjun,Choi Gyehun,Park Haeyong,Choi Yujung,Lee Seungwook,Kim Yunkyung,Jung Y. Jay,Park Donghyuk,Nah Seungjoo,Oh Youngsun,Kim Mihye,Lee Yooseung,Chung Youngwoo,Hisanori Ihara,Im Joonhyuk,Lee Daniel-K J,Yim Byunghyun,Lee GiDoo,Kown Heesang,Choi Sungho,Lee Jeonsook,Jang Dongyoung,Kim Youngchan,Kim Tae Chan,Hiroshige Goto,Choi Chi-Young,Lee Duckhyung,Han GabSoo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6747109/6757318/06757365.pdf?arnumber=6757365

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