Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range
Author:
Yoo Dongsuk1ORCID, Jang Youngtae1, Kim Youngchan1, Shin Jihun1, Lee Kangsun1, Park Seok-Yong1, Shin Seungho1, Lee Hongsuk1, Kim Seojoo1, Park Joongseok1, Park Cheonho1, Lim Moosup1, Bae Hyungjin1, Park Soeun1, Jung Minwook1, Kim Sungkwan1, Choi Shinyeol1, Kim Sejun1, Heo Jinkyeong1, Lee Hojoon1ORCID, Lee KyungChoon1, Jeong Youngkyun1, Oh Youngsun1, Keel Min-Sun1, Kim Bumsuk1, Lee Haechang1, Ahn JungChak1
Affiliation:
1. Samsung Electronics Co., Ltd., Yongin-si 17113, Republic of Korea
Abstract
An automotive 2.1 μm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology. To achieve a high dynamic range, we employ a sub-pixel structure featuring a high conversion gain of a large photodiode and a lateral overflow of a small photodiode connected to an in-pixel storage capacitor. With the sensitivity ratio of 10, the expanded dynamic range could reach 120 dB at 85 °C by realizing a low random noise of 0.83 e- and a high overflow capacity of 210 ke-. An over 25 dB signal-to-noise ratio is achieved during HDR image synthesis by increasing the full-well capacity of the small photodiode up to 10,000 e- and suppressing the floating diffusion leakage current at 105 °C.
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
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