A 3.0 µm Pixels and 1.5 µm Pixels Combined Complementary Metal-Oxide Semiconductor Image Sensor for High Dynamic Range Vision beyond 106 dB

Abstract

We propose a new concept image sensor suitable for viewing and sensing applications. This is a report of a CMOS image sensor with a pixel architecture consisting of a 1.5 μm pixel with four-floating-diffusions-shared pixel structures and a 3.0 μm pixel with an in-pixel capacitor. These pixels are four small quadrate pixels and one big square pixel, also called quadrate–square pixels. They are arranged in a staggered pitch array. The 1.5 μm pixel pitch allows for a resolution high enough to recognize distant road signs. The 3 μm pixel with intra-pixel capacitance provides two types of signal outputs: a low-noise signal with high conversion efficiency and a highly saturated signal output, resulting in a high dynamic range (HDR). Two types of signals with long exposure times are read out from the vertical pixel, and four types of signals are read out from the horizontal pixel. In addition, two signals with short exposure times are read out again from the square pixel. A total of eight different signals are read out. This allows two rows to be read out simultaneously while reducing motion blur. This architecture achieves both an HDR of 106 dB and LED flicker mitigation (LFM), as well as being motion-artifact-free and motion-blur-less. As a result, moving subjects can be accurately recognized and detected with good color reproducibility in any lighting environment. This allows a single sensor to deliver the performance required for viewing and sensing applications.