An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor-Reference-Cited by-同舟云学术

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An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor

Published:2021-01 Issue:1 Volume:68 Page:152-157
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Fujihara Yasuyuki^ORCID,Murata Maasa^ORCID,Nakayama Shota,Kuroda Rihito^ORCID,Sugawa Shigetoshi

Funder

Japan Society for the Promotion of Science (JSPS) the Grant-in-Aid for Scientific Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9306022/09281334.pdf?arnumber=9281334

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Intrascene Wide Dynamic Range CMOS Image Sensor Using Dual-Gain Ramp Generator for Machine Vision Applications;IEEE Transactions on Instrumentation and Measurement;2024

2. [Invited Paper] A High SNR Global Shutter CMOS Image Sensor Technology for High Precision Absorption Imaging Applications;ITE Transactions on Media Technology and Applications;2024

3. A high dynamic range pixel using lateral overflow integration capacitor and adaptive feedback structure in CMOS image sensors;Optoelectronics Letters;2023-12

4. A 3.0 µm Pixels and 1.5 µm Pixels Combined Complementary Metal-Oxide Semiconductor Image Sensor for High Dynamic Range Vision beyond 106 dB;Sensors;2023-11-06

5. A 316MP, 120FPS, High Dynamic Range CMOS Image Sensor for Next Generation Immersive Displays;Sensors;2023-10-11

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