Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain
Author:
Affiliation:
1. Centre for Electronic Imaging (CEI), The Open University, Milton Keynes, U.K.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10136238/10107589.pdf?arnumber=10107589
Reference11 articles.
1. A Photon-Counting 4Mpixel Stacked BSI Quanta Image Sensor with 0.3e- Read Noise and 100dB Single-Exposure Dynamic Range
2. An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor
3. Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling
4. A 4-M Pixel High Dynamic Range, Low-Noise CMOS Image Sensor With Low-Power Counting ADC
5. A 1280 × 1080 4.2 ?m split-diode pixel HDR sensor in 110 nm BSI CMOS process;willassen;Proc Int Image Sensor Workshop,2015
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