6.10 A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation-Reference-Cited by-同舟云学术

6.10 A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation

Published:2024-02-18 Issue: Volume: Page:118-120
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Container-title:2024 IEEE International Solid-State Circuits Conference (ISSCC)
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Author:

Kim DongHyun¹,Cho Kwansik¹,Ji Ho-Chul¹,Kim Minkyung¹,Kim Junghye¹,Kim Taehoon¹,Seo Seungju¹,Im Dongmo¹,Lee You-Na¹,Choi Jinyong¹,Yoon Sunghyun¹,Noh Inho¹,Kim Jinhyung¹,Lee Khang June¹,Jung Hyesung¹,Shin Jongyoon¹,Hur Hyuk¹,Chang Kyoung Eun¹,Cho Incheol¹,Woo Kieyoung¹,Moon Byung Seok¹,Kim Jameyung¹,Ahn Yeonsoo¹,Sim Dahee¹,Park Sungbong¹,Lee Wook¹,Kim Kooktae¹,Chang Chong Kwang¹,Yoon Hansik¹,Kim Juha¹,Kim Sung-In¹,Kim Hyunchul¹,Moon Chang-Rok¹,Song Jaihyuk¹

Affiliation:

1. Samsung Semiconductor,Hwaseong,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10454133/10454267/10454448.pdf?arnumber=10454448

Reference8 articles.

1. 1.4 There’s More to the Picture Than Meets the Eye*, and in the future it will only become more so

2. 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate

3. World Smallest 200Mp CMOS Image Sensor with 0.56μm Pixel Equipped with Novel Deep Trench Isolation Structure for Better Sensitivity and Higher CG;Choi

4. A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology

5. A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower