A 1/1.57-inch 50Mpixel CMOS Image Sensor With 1.0μm All-Directional Dual Pixel by 0.5μm-Pitch Full-Depth Deep-Trench Isolation Technology

Author:

Jung Taesub1,Fujita Masato1,Cho Jeongjin1,Lee Kyungduck1,Seol Doosik1,An Sungmin1,Lee Chanhee1,Jeong Youjin1,Jung Minji1,Park Sachoun1,Baek Seungki1,Jung Seungki1,Lee Seunghwan1,Yun Jungbin1,Shim Eun Sub1,Han Heetak1,Park Eunkyung1,Sul Haesick1,Kang Sehyeon1,Lee Kyungho1,Ahn JungChak1,Chang Duckhyun1

Affiliation:

1. Samsung Electronics,Hwasung,Korea

Publisher

IEEE

Reference8 articles.

1. An All Pixel PDAF CMOS Image Sensor with 0.64?m × 1.28?m Photodiode Separated by Self-aligned In-pixel Deep Trench Isolation for High AF Performance;choi;IEEE Symp VLSI Circuits,0

2. [Paper] A Low Noise and High Sensitivity Image Sensor with Imaging and Phase-Difference Detection AF in All Pixels

3. A 1/4-inch 8Mpixel CMOS Image Sensor with 3D Backside-Illuminated 1.12?m Pixel with Front-Side Deep-Trench Isolation and Vertical Transfer Gate;ahn;ISSCC Dig Tech Papers,2014

4. A Small-size Dual Pixel CMOS Image Sensor with Vertically Broad Photodiode of 0.61 ?m Pitch;yun;Int Image Sensor Workshop,0

5. SNR Metric and Crosstalk in Color Image Sensor of Small Size Pixel;ahn;Proc VLSI-TSA,0

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