A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower-Reference-Cited by-同舟云学术

A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower

Published:2023-02-19 Issue: Volume: Page:
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Container-title:2023 IEEE International Solid- State Circuits Conference (ISSCC)
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Author:

Kim Hyuncheol¹,Kim Yun Hyeok¹,Moon Sanghyuck¹,Kim Hwanwoong¹,Yoo Byeongjun¹,Park Jueun¹,Kim Seyoung¹,Koo June-Mo¹,Seo Sewon¹,Shin Hye Ji¹,Choi Younghwan¹,Kim Jinwoo¹,Kim Kyungil¹,Seo Jae-Hoon¹,Lim Seunghyun¹,Jung Taesub¹,Park Howoo¹,Jung Sangil¹,Ko Juhyun¹,Lee Kyungho¹,Ahn JungChak¹,Yim JoonSeo¹

Affiliation:

1. Samsung Electronics,Hwasung,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067732.pdf?arnumber=10067732

Reference7 articles.

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3. A 64Mpixel CMOS Image Sensor with 0.50?m Unit Pixels Separated by Front Deep-Trench Isolation;park;ISSCC,2022

4. All-Directional Dual Pixel Auto Focus Technology in CMOS Image Sensors

5. An All Pixel PDAF CMOS Image Sensor with 0.64?mx1.28?m Photodiode Separated by Self-aligned In-pixel Deep Trench Isolation for High AF Performance;choi;IEEE Symp VLSI Circuits,2017

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