TFET-Based Pixel Source Follower of CMOS Image Sensor for Improved Linearity and High Signal-to-Noise Ratio
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/10235271/10190327.pdf?arnumber=10190327
Reference24 articles.
1. Demonstration of Noise Reduction Effect of Native Metal-Oxide-Semiconductor Field-Effect Transistor Used for CMOS Image Sensors
2. TFET-Based Circuit Design Using the Transconductance Generation Efficiency $ {g}_{m}/ {I}_{d}$ Method
3. A CMOS Image Sensor With In-Pixel Buried-Channel Source Follower and Optimized Row Selector
4. A Low-Voltage 0.7 µm Pixel with 6000 e- Full-Well Capacity for a Low-Power CMOS Image Sensor
5. Linearity analysis of a CMOS image sensor
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