New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain-Reference-Cited by-同舟云学术

New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain

Published:2024-04-08 Issue: Volume: Page:
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Author:

Kim Ki Yeong¹,Kim Hyangwoo¹,Yoo Hyeongseok¹,Choi Minkeun¹,Kim Yijoon¹,Oh Kyounghwan¹,Sol Yoon²,Park Sungbong²,Lee Jae-Kyu²,Baek Chang-Ki¹

Affiliation:

1. Pohang University of Science and Technology (POSTECH)

2. Samsung Electronics

Abstract

Abstract We have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain (Av) and low 1/f noise simultaneously. The TSF is composed of N-P-N-N, especially the p-doped grounded area, which serves to amplify the insufficient tunneling current, allowing the source follower (SF) to utilize band-to-band tunneling (BTBT). Compared to thermionic emission, tunneling based structures contribute to increasing Av through lower channel length modulation and lower body effect. As a result, TSF achieves a higher Av (~1.0 V/V) than conventional SF (~0.9 V/V). Moreover, the n-doped channel makes the buried conductive channel farther from the interface, lowering the noise. The current noise spectral density (SI) is approximately 10 times lower in TSF than that of in conventional SF. Therefore, our TSF can be a possible candidate for High Av and low 1/f noise image sensors.

Publisher

Research Square Platform LLC

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