Cross-Point Alignment for All AF Pixels in CMOS Image Sensors

Author:

Hwang Jae-Hyeok1ORCID,Kim Yunkyung2ORCID

Affiliation:

1. Department of ICT Integrated Safe Ocean Smart Cities, Dong-A University, Busan, South Korea

2. Department of ICT Integrated Safe Ocean Smart Cities and Electronics Engineering, Dong-A University, Busan, South Korea

Funder

Dong-A University research fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Reference44 articles.

1. A 4M pixel full-PDAF CMOS image sensor with 1.58 ?m 2×1 on-chip micro-split-lens technology;morimitsu;Inst Image Inf Telev Eng,2015

2. A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12 ?m pixel with front-side deep-trench isolation and vertical transfer gate;ahn;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2014

3. Suppression of crosstalk by using backside deep trench isolation for 1.12μm backside illuminated CMOS image sensor

4. The state-of-the-art of smartphone imagers;fontaine;Proc Int Image Sensor Workshop,2019

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