Factors influencing intermodulation distortion performance of a FET
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx4/5450/14715/00668624.pdf?arnumber=668624
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-11-22
2. Multi-Bias and Nonlinear Distortion Analysis for GaAs Nano-HEMT: Performance Projection;2022 IEEE Global Conference on Computing, Power and Communication Technologies (GlobConPT);2022-09-23
3. Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3rd-Order Intermodulation Distortion;2021 3rd International Conference on Sustainable Technologies for Industry 4.0 (STI);2021-12-18
4. Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-02-18
5. Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2020-03
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