Multi-Bias and Nonlinear Distortion Analysis for GaAs Nano-HEMT: Performance Projection-Reference-Cited by-同舟云学术

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Multi-Bias and Nonlinear Distortion Analysis for GaAs Nano-HEMT: Performance Projection

Published:2022-09-23 Issue: Volume: Page:
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Container-title:2022 IEEE Global Conference on Computing, Power and Communication Technologies (GlobConPT)
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Author:

Alim Mohammad Abdul¹,Naima Jannatul¹,Sultana Sadia²,Alam Sabrina¹,Jui Fahmida Sharmin³,Rezazadeh Ali A.⁴

Affiliation:

1. University of Chittagong,Electrical and Electronic Engineering,Chittagong,Bangladesh

2. Comilla University,Information & Communication Technology,Cumilla,Bangladesh

3. Southern University Bangladesh,Electronics & Communication Engineering,Chittagong,Bangladesh

4. The University of Manchester,Electrical and Electronic Engineering,Manchester,U.K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9938124/9938145/09938350.pdf?arnumber=9938350

Reference11 articles.

1. Compact modelling of non-linear distortion in analogue communication circuits;wambacq;Design Automation and Test in Europe Paris France,2002

2. Factors influencing intermodulation distortion performance of a FET

3. On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

4. Intrinsic dependence of intermodulation distortion in HEMTs;qu;Proceedings of the Asia Pacific Microwave Conference,2005

5. Third-order intercepts and nonlinear distortion level investigation for pre and post multilayer pHEMTs

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