Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT-Reference-Cited by-同舟云学术

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

Published:2021-02-18 Issue:5 Volume:34 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Alim Mohammad A.¹^ORCID,Ali Mayahsa M.²,Crupi Giovanni³^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering University of Chittagong Chittagong Bangladesh

2. Postgraduate Studies Administrator in Informatics Institute University of Information Technology and Communications Baghdad Iraq

3. BIOMORF Department University of Messina Messina Italy

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

Reference49 articles.

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