Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT-Reference-Cited by-同舟云学术

Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT

Published:2022-11-22 Issue: Volume: Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Alim Mohammad A.¹^ORCID,Sultana Sadia²,Naima Jannatul¹^ORCID,Jui Fahmida S.³,Alam Sabrina¹,Rezazadeh Ali A.⁴

Affiliation:

1. Department of Electrical & Electronic Engineering University of Chittagong Chittagong Bangladesh

2. Information & Communication Technology Comilla University Cumilla Bangladesh

3. Electronics & Communication Engineering Southern University Chittagong Bangladesh

4. School of Electrical and Electronic Engineering The University of Manchester Manchester UK

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.3081

Reference29 articles.

1. An improved linear modeling technique with sensitivity analysis for GaN HEMT;Luo D;Int J Numer Model Electron Netw Devices Fields,2017

2. Modeling MESFETs and HEMTs intermodulation distortion behavior using a generalized radial basis function network;Garcia JA;Int J RF Microw Comput Aid Eng,1999

3. WebsterDR AtaeiGR HaighDG KaunistoR.Factors influencing intermodulation distortion performance of a FET. InIEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. 1997). IEEE 309‐314.

4. WambacqP DobrovolnyP DonnayS EngelsM BolsensI.Compact modeling of nonlinear distortion in analog communication circuits. InProceedings Design Automation and Test in Europe Conference and Exhibition 2000 (Cat. No. PR00537)2000Mar 27 (pp.350‐354).IEEE.

5. Intermodulation analysis of dual‐gate FET mixers;Kim J;IEEE Transac Microw Theory Tech,2002