An improved linear modeling technique with sensitivity analysis for GaN HEMT-Reference-Cited by-同舟云学术

An improved linear modeling technique with sensitivity analysis for GaN HEMT

Published:2016-01-05 Issue:1 Volume:30 Page:e2139
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Luo Danting¹,Shen Li¹,Gao Jianjun¹

Affiliation:

1. Shanghai Key Laboratory of Multidimensional Information Processing; School of Information Science and Technology, East China Normal University; Shanghai 200241 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2139/fullpdf

Reference19 articles.

1. An improved small-signal parameter-extraction algorithm for GaN HEMT devices;Brady;IEEE Trans Microw Theory Technol,2008

2. An approach for extracting small signal equivalent circuit of double heterojunction δ-doped PHEMTs for millimeter wave applications;Gao;Int J Infrared Millimeter Waves,2002

3. A new small-signal modeling and extraction method in AlGaN/GaN HEMTs;Lu;Solid State Electron,2008

4. Neural approach for temperature dependent modeling of GaN HEMTs;Marinković;Int J Numer Model

5. Advances in linear modeling of microwave transistors;Zarate-de Landa;IEEE Microw Mag,2009

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2. Performance projection of multi‐bias and nonlinear distortion for gallium arsenides nano‐pHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-11-22

3. Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures;Electronics;2021-05-09

4. Sensitivity analysis and uncertainty estimation in small‐signal modeling for InP HBT (invited paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-12-20

5. Guest editorial for the special issue on linear and nonlinear modeling of GaN transistors and circuits;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2016-09-07