Advances in Linear Modeling of Microwave Transistors-Reference-Cited by-同舟云学术

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Advances in Linear Modeling of Microwave Transistors

Published:2009-04 Issue:2 Volume:10 Page:100, 102-111, 146
ISSN:1527-3342
Container-title:IEEE Microwave Magazine
language:
Short-container-title:IEEE Microwave

Author:

Zarate-de Landa Andres,Zuniga-Juarez Jose,Loo-Yau Jose,Reynoso-Hernandez J.,Maya-Sanchez Maria,del Valle-Padilla Juan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/6668/4906346/04906382.pdf?arnumber=4906382

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel method to determine bias-dependent source and drain parasitic series resistances in AlGaN/GaN high electron mobility transistors;Solid-State Electronics;2024-10

2. Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation;Engineering, Technology & Applied Science Research;2024-08-02

3. A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements;Electronics;2023-04-08

4. Simulation-based study of current gain peaks h ₂₁ at low gate bias in AlGaN/GaN HEMTs^*;Engineering Research Express;2022-06-01

5. Equivalent‐circuit extraction for gallium nitride electron devices: Direct versus optimization‐empowered approaches;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-04-03

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