Performance Prediction of GaN HEMTs Using Angelov and Curtice Models-Reference-Cited by-同舟云学术

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Performance Prediction of GaN HEMTs Using Angelov and Curtice Models

Published:2022-04-21 Issue: Volume: Page:
ISSN:
Container-title:2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT)
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Author:

Rakib Famin Rahman¹,Uddin Rafi Refat¹,Alim Mohammad Abdul¹

Affiliation:

1. University of Chittagong,Electrical and Electronic Engineering,Chittagong,Bangladesh

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9807685/9807649/09808081.pdf?arnumber=9808081

Reference16 articles.

1. Curtice Quadratic GaAsFET Model,0

2. Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

3. An analytical model for current–voltage characteristics of AlGaN/GaN HEMTs in presence of self-heating effect

4. Thermal model for dc characteristics of algan/gan hemts including self-heating effect and non-linear polarization

5. Physics-Based Modeling of GaN HEMTs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimized Electrothermal Drain Current Modeling of GaN-Based HEMT;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02

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