Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3<sup>rd</sup>-Order Intermodulation Distortion-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3^rd-Order Intermodulation Distortion

Published:2021-12-18 Issue: Volume: Page:
ISSN:
Container-title:2021 3rd International Conference on Sustainable Technologies for Industry 4.0 (STI)
language:
Short-container-title:

Author:

Alim Mohammad A.¹,Jahan I.²,Ali Mayahsa M.³,Gaquiere Christophe⁴

Affiliation:

1. University of Chittagong,Dept of Electrical and Electronic Engineering,Bangladesh

2. University of Information Technology and Communications,Baghdad,Iraq

3. Green University,Dept of Electrical and Electronic Engineering,Bangladesh

4. Institute of Electronic, Microelectronic Nanotechnology (IEMN), The University of Lille,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9732402/9732406/09732585.pdf?arnumber=9732585

Reference11 articles.

1. Compact modelling of nonlinear distortion in analogue communication circuits;wambacq;Design Automation and Test in Europe,0

2. Factors influencing intermodulation distortion performance of a FET

3. On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

4. Intrinsic dependence of intermodulation distortion in HEMTs;qu;Proceedings of the Asia Pacific Microwave Conference,0

5. Third-order intercepts and nonlinear distortion level investigation for pre and post multilayer pHEMTs

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP