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Low Leakage Fully Half-Select-Free Robust SRAM Cells With BTI Reliability Analysis

  • Published:2018-09 Issue:3 Volume:18 Page:337-349
  • ISSN:1530-4388
  • Container-title:IEEE Transactions on Device and Materials Reliability
  • language:
  • Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Ahmad SayeedORCID,Iqbal BelalORCID,Alam NaushadORCID,Hasan Mohd.

Funder

University Grants Committee

Council for Scientific and Industrial Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Cited by 54 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Single Bitline Highly Stable, Low Power With High Speed Half-Select Disturb Free 11T SRAM Cell;ACM Transactions on Design Automation of Electronic Systems;2024-07-09

2. A low power static noise margin enhanced reliable 8 T SRAM cell;Microsystem Technologies;2024-04-20

3. A Single Line 8T SRAM Bit Cell with Robust Read, Hold Stability and Low Power;Lecture Notes in Networks and Systems;2024

4. Design and Performance Analysis of 11-T SRAM Cell with BTI Reliability;2023 2nd International Conference on Automation, Computing and Renewable Systems (ICACRS);2023-12-11

5. Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology;ACM Transactions on Design Automation of Electronic Systems;2023-10-28
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