Design and Performance Analysis of 11-T SRAM Cell with BTI Reliability-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Design and Performance Analysis of 11-T SRAM Cell with BTI Reliability

Published:2023-12-11 Issue: Volume: Page:166-173
ISSN:
Container-title:2023 2nd International Conference on Automation, Computing and Renewable Systems (ICACRS)
language:
Short-container-title:

Author:

Satyanarayana B V V¹,Kumar G Prasanna¹,Budumuru Prudhvi Raj¹,Sridhara S V Kiranmayi²,Swathi Samanthapudi³,Phani T S S⁴

Affiliation:

1. Vishnu Institute of Technology,ECE Department,Bhimavaram,India

2. Aditya College of Engineering and Technology,ECE Department,Surampalem,India

3. SRKR Engineering College,ECE Department,Bhimavaram,India

4. BVC Engineering College,ECE Department,Odalarevu,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10404046/10404076/10405276.pdf?arnumber=10405276

Reference17 articles.

1. A Leakage Compensation Design for Low Supply Voltage SRAM

2. Ultralow-Voltage Process-Variation-Tolerant Schmitt-Trigger-Based SRAM Design

3. Variations-tolerant 9T SRAM circuit with robust and low leakage SLEEP mode

4. Design of an Ultra-low Voltage 9T SRAM With Equalized Bitline Leakage and CAM-Assisted Energy Efficiency Improvement

5. A 40 nm 0.32 V 3.5 MHz 11T single-ended bit-interleaving subthreshold SRAM with data-aware write-assist

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP