Author:
Jiao Hailong,Qiu Yongmin,Kursun Volkan
Cited by
8 articles.
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1. Design and Performance Analysis of 11-T SRAM Cell with BTI Reliability;2023 2nd International Conference on Automation, Computing and Renewable Systems (ICACRS);2023-12-11
2. Logic Circuit Implementation for Enabling SRAM Based In Memory Computing;2022 5th International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT);2022-11-26
3. Performance Analysis of 9T SRAM using 180nm, 90nm, 65nm, 32nm, 14nm CMOS Technologies;International Journal of Electrical and Electronics Research;2022-06-30
4. Optimum sizing of the sleep transistor in MTCMOS technology;AEU - International Journal of Electronics and Communications;2021-08
5. Analytical modelling and design of 9T SRAM cell with leakage control technique;Analog Integrated Circuits and Signal Processing;2019-06-25