Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric-Reference-Cited by-同舟云学术

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Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Published:2012-04 Issue:4 Volume:33 Page:552-554
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Chien-Hung,Chang Kow-Ming,Huang Sung-Hung,Deng I-Chung,Wu Chin-Jyi,Chiang Wei-Han,Chang Chia-Chiang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6172299/06165637.pdf?arnumber=6165637

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3. High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized Al_xO_y;IEEE Transactions on Electron Devices;2023-02

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5. Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target;Journal of Central South University;2022-04

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