Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target
Author:
Publisher
Springer Science and Business Media LLC
Subject
Metals and Alloys,General Engineering
Link
https://link.springer.com/content/pdf/10.1007/s11771-022-4978-9.pdf
Reference45 articles.
1. CHEN Jiang-bo, WANG Li, SU Xue-qiong, et al. Pulsed laser deposited InGaZnO thin film on silica glass [J]. Journal of Non-Crystalline Solids, 2012, 358(17): 2466–2469. DOI: https://doi.org/10.1016/j.jnoncrysol.2011.12.039.
2. CHEN X F, HE G, GAO J, et al. Substrate temperature dependent structural, optical and electrical properties of amorphous InGaZnO thin films [J]. Journal of Alloys and Compounds, 2015, 632: 533–539. DOI: https://doi.org/10.1016/j.jallcom.2015.01.143.
3. CHEN Jie, ZHONG Jing-ming, LUO Wen, et al. Study on powder preparation of IGZO target and its effect on sintering [J]. Journal of Alloys and Compounds, 2019, 800: 468–477. DOI: https://doi.org/10.1016/j.jallcom.2019.06.031.
4. NOMURA K, KAMIYA T, OHTA H, et al. Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films [J]. Applied Physics Letters, 2004, 85(11): 1993–1995. DOI: https://doi.org/10.1063/1.1788897.
5. QI Chao, CHEN Jie, SUN Ben-shuang, et al. Microstructure and phase transformation of IGZO targets with different stoichiometry during sintering [J]. Ceramics International, 2020, 46(8): 10568–10577. DOI: https://doi.org/10.1016/j.ceramint.2020.01.060.
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