High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized Al x O y -Reference-Cited by-同舟云学术

High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized Al_xO_y

Published:2023-02 Issue:2 Volume:70 Page:537-543
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lin Xiaoyu¹^ORCID,Xin Qian¹^ORCID,Kim Jaekyun²,Jin Jidong²^ORCID,Zhang Jiawei¹^ORCID,Song Aimin¹^ORCID

Affiliation:

1. Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, China

2. Department of Photonics and Nanoelectronics, Hanyang University, Ansan, Republic of Korea

Funder

Natural Science Foundation of Shandong Province

National Natural Science Foundation of China

Competency Development Program for Industry Specialists of the Korean Ministry of Trade, Industry and Energy (MOTIE), operated by the Korea Institute for Advancement of Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/09994651.pdf?arnumber=9994651

Reference47 articles.

1. Characterization of Anodic Films on Aluminum Formed in Carboxylate‐Based Nonaqueous Electrolyte Solutions

2. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

3. Interface states at the anodized Al2O3-metal interface

4. Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

5. Current Understanding of Ti Anodisation: Functional, Morphological, Chemical and Mechanical Aspects

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