TiO2‐Based Schottky Diodes as Bidirectional Switches for Bipolar Resistive Memories

Author:

Zhang Xijian1ORCID,Jin Jidong2ORCID,Kim Jaekyun2ORCID,Balocco Claudio3,Zhang Jiawei1ORCID,Song Aimin45ORCID

Affiliation:

1. Shandong Technology Center of Nanodevices and Integration School of Integrated Circuits Shandong University Jinan 250100 China

2. Department of Photonics and Nanoelectronics Hanyang University Ansan 15588 Republic of Korea

3. Department of Engineering Durham University Durham DH1 3LE UK

4. Institute of Nanoscience and Applications Southern University of Science and Technology Shenzhen 518055 China

5. Department of Electrical and Electronic Engineering University of Manchester Manchester M13 9PL UK

Abstract

This study presents TiO2‐based Schottky diodes designed as bidirectional switches for bipolar resistive memories. The TiO2 films in these Schottky diodes are prepared through an anodization process. The reverse current of these diodes exhibits an exponential increase with rising reverse voltage, ultimately matching the forward current. When two diodes are connected back‐to‐back, they demonstrate superior current–voltage symmetry and provide a wider off‐state voltage range compared to a single diode, reaching up to 3.65 V. The adjustable off‐state voltage range (0.40–3.65 V) of the switch, whether utilizing two diodes or a single diode, correlates well with the TiO2 layer thickness and oxygen partial pressure during Pt electrode sputtering. These diodes possess bidirectional switching characteristics and can serve as effective switch elements to address the sneak‐path issue in bipolar resistive memories.

Publisher

Wiley

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