Atomistic Insights on the Full Operation Cycle of a HfO2-Based Resistive Random Access Memory Cell from Molecular Dynamics-Reference-Cited by-同舟云学术

Atomistic Insights on the Full Operation Cycle of a HfO2-Based Resistive Random Access Memory Cell from Molecular Dynamics

Published:2021-07-30 Issue:8 Volume:15 Page:12945-12954
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Urquiza M. Laura¹,Islam Md Mahbubul²^ORCID,van Duin Adri C. T.³^ORCID,Cartoixà Xavier¹^ORCID,Strachan Alejandro⁴

Affiliation:

1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain

2. Department of Mechanical Engineering, Wayne State University, Detroit, Michigan 48202, United States

3. Department of Mechanical Engineering, Pennsylvania State University, 240 Research East Building, University Park, Pennsylvania 16802, United States

4. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Funder

Ministerio de Ciencia, Innovaci??n y Universidades

European Regional Development Fund

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c01466

Reference47 articles.

1. 10×10nm² Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

2. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

3. Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

5. Physics of the Switching Kinetics in Resistive Memories

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