Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM-Reference-Cited by-同舟云学术

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Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM

Published:2008-12 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Electron Devices Meeting
language:
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Author:

Lee H. Y.,Chen P. S.,Wu T. Y.,Chen Y. S.,Wang C. C.,Tzeng P. J.,Lin C. H.,Chen F.,Lien C. H.,Tsai M.-J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796677.pdf?arnumber=4796677

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