Physics of the Switching Kinetics in Resistive Memories-Reference-Cited by-同舟云学术

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Physics of the Switching Kinetics in Resistive Memories

Published:2015-06-18 Issue:40 Volume:25 Page:6306-6325
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Menzel Stephan¹,Böttger Ulrich²,Wimmer Martin³,Salinga Martin³

Affiliation:

1. Peter Grünberg Institute (PGI-7); Research Center Jülich; 52425 Jülich Germany

2. Institute of Materials in Electrical Engineering and Information Technology II; RWTH Aachen University; 52056 Aachen Germany

3. I. Physikalisches Institut 1A; RWTH Aachen University; 52056 Aachen Germany

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference161 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Cation-based resistance change memory

3. Memristive devices for computing

4. Phase change materials

5. Metal–Oxide RRAM

Cited by 239 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors;Journal of Alloys and Compounds;2024-11

2. MoS₂/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters;Advanced Functional Materials;2024-09-06

3. Improved resistive switching behavior of defective fluorite structured Sm2Ce2O7 thin film prepared by RF sputtering;Ceramics International;2024-09

4. Large area pulsed laser deposition of memristive Pr0.7Ca0.3MnO3 heterostructures for neuromorphic computing;Thin Solid Films;2024-09

5. Resistive Switching Acceleration Induced by Thermal Confinement;Advanced Electronic Materials;2024-08-30

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