A Two-Way Power-Combining 60GHz CMOS Power Amplifier with 22.0% PAE and 19.4dBm Psat in 65nm Bulk CMOS
Author:
Funder
National Key Research and Development Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9401028/9401051/09401191.pdf?arnumber=9401191
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Ka-band Power Amplifier Improving OP1dB through Gain Expansion Achieving 28.1% PAE;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14
2. A 26-39.5 GHz Two-Path Voltage-Combined Power Amplifier with Bandwidth Broadening Technique in 22nm FD-SOI;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25
3. A 57-64 GHz Two-Way Parallel-Combined Power Amplifier with 16.6 dBm Psat and 23.6% Peak PAE in 40nm Bulk CMOS;2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2022-08-29
4. A 28-GHz Series-Parallel Combined Doherty Power Amplifier with PBO Efficiency Enhancement in 40nm Bulk CMOS;2022 IEEE MTT-S International Wireless Symposium (IWS);2022-08-12
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