A Ka-band Power Amplifier Improving OP1dB through Gain Expansion Achieving 28.1% PAE-Reference-Cited by-同舟云学术

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A Ka-band Power Amplifier Improving OP1dB through Gain Expansion Achieving 28.1% PAE

Published:2023-05-14 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT)
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Author:

Chu Yu¹,Liu Zhiqing²,Li ChaoHai¹,Wu Yunqiu¹,Liu Huihua¹,Zhao Chenxi¹,Yu Yiming¹,Kang Kai¹

Affiliation:

1. University of Electronic Science and Technology of China,School of Electronic Science and Engineering,Chengdu,China,611731

2. Southwest China Institute of Electronic Technology,Chengdu,China,610036

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10275796/10276388/10277550.pdf?arnumber=10277550

Reference6 articles.

1. High PAE CMOS Power Amplifier With 44.4% FBW Using Superimposed Dual-Band Configuration and DGS Inductors

2. A 13.5–19 GHz 20.6-dB Gain CMOS Power Amplifier for FMCW Radar Application

3. A Two-Way Power-Combining 60GHz CMOS Power Amplifier with 22.0% PAE and 19.4dBm Psat in 65nm Bulk CMOS

4. A 44 To 64 GHz Broadband 90° Hybrid Doherty PA With Quasi Non-Foster Tuner in 0.13 μm SiGe

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