A 26-39.5 GHz Two-Path Voltage-Combined Power Amplifier with Bandwidth Broadening Technique in 22nm FD-SOI
Author:
Affiliation:
1. Fudan University,State Key Laboratory of ASIC & System,Shanghai,China,200433
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Natural Science Foundation of Shanghai
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963472.pdf?arnumber=9963472
Reference7 articles.
1. A Linear CMOS Power Amplifier With Efficiency-Optimized Transformer Matching
2. A 65 nm CMOS Power Amplifier With Peak PAE above 18.9% From 57 to 66 GHz Using Synthesized Transformer-Based Matching Network
3. A 32 GHz 20 dBm-PSAT transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS
4. 24.6 An Instantaneously Broadband Ultra-Compact Highly Linear PA with Compensated Distributed-Balun Output Network Achieving >17.8dBm P1dB and >36.6% PAEP1dB over 24 to 40GHz and Continuously Supporting 64-/256-QAM 5G NR Signals over 24 to 42GHz
5. Improvement of AM–PM in a 33-GHz CMOS SOI Power Amplifier Using pMOS Neutralization
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