A 28-GHz Series-Parallel Combined Doherty Power Amplifier with PBO Efficiency Enhancement in 40nm Bulk CMOS
Author:
Affiliation:
1. Fudan University,State Key Laboratory of ASIC & System,China
2. Nanjing Electronic Equipment Institute,China
Funder
National Key Research and Development Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9977438/9977447/09977668.pdf?arnumber=9977668
Reference9 articles.
1. 24.3 A 28GHz Current-Mode Inverse-Outphasing Transmitter Achieving 40%/31% PA Efficiency at Psat/6dB PBO and Supporting 15Gbit/s 64-QAM for 5G Communication
2. A Ka-Band Transformer-Based Doherty Power Amplifier for Multi-Gb/s Application in 90-nm CMOS
3. 26.3 A mm-Wave Power Amplifier for 5G Communication Using a Dual-Drive Topology Exhibiting a Maximum PAE of 50% and Maximum DE of 60% at 30GHz
4. A Ka-band 65-nm CMOS neutralized medium power amplifier for 5G phased-array applications
5. Fully Integrated CMOS Power Amplifier;gang;EECS Department University of California Berkeley USA,2006
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1. Design of CMOS RF Doherty Power Amplifier in Low-Power 5G Wireless Networks for IoT Application;2023 IEEE 11th Conference on Systems, Process & Control (ICSPC);2023-12-16
2. A 23-29.5 GHz Differential Power Amplifier in a 45-nm SOI CMOS Technology for 5G Millimeter-Wave Application;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14
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