Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs
Author:
Affiliation:
1. The Hong Kong University of Science and Technology,Dept. of Electronic and Computer Engineering,Hong Kong,China
Funder
Impact Fund
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813597.pdf?arnumber=9813597
Reference21 articles.
1. Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
2. ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping
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1. Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses;IEEE Transactions on Electron Devices;2024-08
2. Comprehensive Study of Human-Body-Model Electrostatic Discharge on p-GaN Gate Power HEMT with AlGaN Barrier Spacers;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
3. Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs;IEEE Transactions on Industrial Electronics;2024-03
4. Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor;Acta Physica Sinica;2024
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