Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China
Funder
Hong Kong Research Impact Fund
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
http://xplorestaging.ieee.org/ielx7/41/10255541/10100647.pdf?arnumber=10100647
Reference36 articles.
1. ESD robustness of AlGaN/GaN HEMT devices
2. Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
3. Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs
4. Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress
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1. Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System;IEEE Electron Device Letters;2024-07
2. Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
3. A High-Voltage/High-Speed Human-Body-Model ESD Simulator Using SiC MOSFET;IEEE Electron Device Letters;2024-06
4. Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
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