Author:
Canato E.,Meneghini M.,Nardo A.,Masin F.,Barbato A.,Barbato M.,Stockman A.,Banerjee A.,Moens P.,Zanoni E.,Meneghesso G.
Funder
InRel-NPower
Horizon 2020 - Research and Innovation Programme
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Power Gan Devices: Materials, Applications and Reliability;Meneghini,2017
2. ESD in Silicon Integrated Circuits;Amerasekera,2002
3. ESD: Physics and Devices;Voldman,2004
4. ESD issues in compound semiconductor high-frequency devices and circuits;Bock;Microelectron. Rel,1998
5. Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs;Meneghesso;IEEE Trans. Electron Devices,2003
Cited by
14 articles.
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