Comprehensive Study of Human-Body-Model Electrostatic Discharge on p-GaN Gate Power HEMT with AlGaN Barrier Spacers
Author:
Affiliation:
1. College of Semiconductor Research, National Tsing-Hua University,Hsinchu,Taiwan,R.O.C.
2. Institute of Electronics Engineering, National Tsing Hua University,Hsinchu,Taiwan,R.O.C.
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579584.pdf?arnumber=10579584
Reference9 articles.
1. A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems
2. Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application
3. On-Chip Gate ESD Protection for AlGaN/GaN E-Mode Power HEMT Delivering >2kV HBM ESD Capability
4. Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs
5. Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs
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