Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application-Reference-Cited by-同舟云学术

Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application

Published:2021-05-04 Issue:6 Volume:36 Page:064001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wong Roy K-Y^ORCID,Hao Ronghui,Chou Allen,Zou Y B,Shen J Y,Li Sichao,Yang C,Hu Tiger,Chen F,Zhang J H,Zhang Ray,Cao Kenny,Chen L L,Zhao Thomas,He Simon,Lee Seiya,Zhang Martin,Wu Marco,Lee John,Chen P W,Xie Andy,Zhang Justin,Chen H Y,Zhou D,Chiu H C,Zhang Jeff

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/abe551/pdf

Reference33 articles.

1. GaN-on-Si power technology devices and applications;Kevin;IEEE Trans. Electron Devices,2017

2. The 2018 GaN power electronics roadmap;Amano;J. Phys. D: Appl. Phys.,2018

3. Driving GaN power transistors;Ma,2019

4. A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems;Roy,2015

5. 200 mm GaN-on-Si epitaxy and e-mode device technology;Marcon,2015

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