Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching
Author:
Affiliation:
1. Virginia Tech,Center for Power Electronics Systems (CPES),Blacksburg,USA
2. Virginia Tech,CPES,Blacksburg,USA
3. University of Cambridge,Department of Engineering,Cambridge,UK
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147610.pdf?arnumber=10147610
Reference17 articles.
1. Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching
2. Gate Reliability of Schottky-Type p-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias
3. Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
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1. Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
2. Gate Lifetime of P-Gate GaN HEMT Under DC and Switching Overvoltage Stress;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04
3. Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04
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