Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
Author:
Affiliation:
1. University of Bologna,ARCES-DEI,Cesena,Italy
2. Imec and Ghent University,Centre for Microsystems Technology,Ghent,Belgium,9052
3. Imec,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764592.pdf?arnumber=9764592
Reference28 articles.
1. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
2. Carrier Transport Mechanisms Underlying the Bidirectional ${V}_{\mathrm{{TH}}}$ Shift in p-GaN Gate HEMTs Under Forward Gate Stress
3. Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs
4. VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress
5. Demonstration of Electron/Hole Injections in the Gate of $p$-GaN/AlGaN/GaN Power Transistors and Their Effect on Device Dynamic Performance
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1. P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime;IEEE Electron Device Letters;2024-09
2. Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method;IEEE Transactions on Power Electronics;2024-05
3. Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
4. Gate Lifetime of P-Gate GaN HEMT Under DC and Switching Overvoltage Stress;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04
5. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07
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