Gate Reliability of Schottky-Type <i>p</i>-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias-Reference-Cited by-同舟云学术

Gate Reliability of Schottky-Type p-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias

Author:

Cheng Yan¹^ORCID,He Jiabei²^ORCID,Xu Han²^ORCID,Zhong Kailun²^ORCID,Zheng Zheyang¹^ORCID,Sun Jiahui²^ORCID,Chen Kevin J.¹^ORCID

Affiliation:

1. The Hong Kong University of Science and Technology, Shenzhen Research Institute, Shenzhen, China

2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Sai Kung, Hong Kong

Funder

Shenzhen Science and Technology Innovation Committee

Hong Kong Innovation and Technology Fund’s Midstream Research Programme for Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference28 articles.

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