Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs-Reference-Cited by-同舟云学术

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Characterization and analysis of low-temperature time-to-failure behavior in forward-biased Schottky-type p-GaN gate HEMTs

Published:2020-06-01 Issue:22 Volume:116 Page:223502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

He Jiabei¹^ORCID,Wei Jin¹,Li Yang²,Zheng Zheyang¹,Yang Song¹,Huang Baoling²,Chen Kevin J.¹^ORCID

Affiliation:

1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China

2. Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China

Funder

Hong Kong Innovation and Technology Fund

Hong Kong Research Impact Fund

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0007763

Reference28 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Review of technology for normally-off HEMTs with p-GaN gate

3. GaN power switches on the rise: Demonstrated benefits and unrealized potentials

4. p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

5. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

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1. P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime;IEEE Electron Device Letters;2024-09

2. Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System;IEEE Electron Device Letters;2024-07

3. Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations;Semiconductor Science and Technology;2024-06-18

4. Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique;Applied Physics Express;2024-05-01

5. Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method;IEEE Transactions on Power Electronics;2024-05

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