Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors-Reference-Cited by-同舟云学术

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Published:2015-11-09 Issue:19 Volume:107 Page:193506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ťapajna M.¹,Hilt O.²,Bahat-Treidel E.²,Würfl J.²,Kuzmík J.¹

Affiliation:

1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava, Slovakia

2. Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany

Funder

Agentúra Ministerstva školstva, vedy, výskumu a športu SR (Agency of the Ministry of Education, Science, Research and Sport of the Slovak Republic for the Structural Funds of EU)

Seventh Framework Programme (FP7)

Vedecká Grantová Agentúra MŠVVaŠ SR a SAV (VEGA)

Agentúra na Podporu Výskumu a Vývoja (APVV)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935223

Reference18 articles.

1. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

2. Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

3. Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

4. Techniques towards GaN power transistors with improved high voltage dynamic switching properties

5. Normally-on/off AlN/GaN high electron mobility transistors

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