Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current-Reference-Cited by-同舟云学术

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Design of a 5MHz half-bridge gate driver for GaN HEMTs with adaptive output current

Published:2023-10-10 Issue:19 Volume:20 Page:20230342-20230342
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Li Liang¹,Zhou Dejin²,Huang Wei³,He Ningye⁴,Xu Yuan⁴,Ning Rengxia⁴,Chen Zhenhai⁴

Affiliation:

1. School of electronics and information engineering, Suzhou Vocational University

2. Wuxi Research Institute of Applied Technologies, Tsinghua University

3. School ofMicroelectronics, Fudan University

4. Huangshan University, Engineering Technology Research Center of Intelligent Microsystems

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/20/19/20_20.20230342/_pdf

Reference30 articles.

1. [1] N. Fichtenbaum, et al.: “Half-bridge GaN power ICs: performance and application,” IEEE Power Electron. Mag. 4 (2017) 33 (DOI: 10.1109/mpel.2017.2719220).

2. [2] C. Kuring, et al.: “GaN-based multichip half-bridge power module integrated on high-voltage AlN ceramic substrate,” IEEE Trans. Power Electron. 37 (2022) 11896 (DOI: 10.1109/tpel.2022.3172659).

3. [3] L. Sayadi, et al.: “Threshold voltage instability in p-GaN gate AlGaN/GaN HFETs,” IEEE Trans. Electron. Devices 65 (2018) 2454 (DOI: 10.1109/TED.2018.2828702).

4. [4] M. Cui, et al.: “Monolithic GaN half-bridge stages with integrated gate drivers for high temperature DC-DC buck converters,” IEEE Access 7 (2019) 184375 (DOI: 10.1109/access.2019.2958059).

5. [5] L. Efthymiou, et al.: “Understanding the threshold voltage instability during off-state stress in p-GaN HEMTs,” IEEE Electron Device Lett. 40 (2019) 1253 (DOI: 10.1109/LED.2019.2925776).

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